Date & Time: Sunday, January 20, 2019, 9:30 am – 5:30 pm

1) 5G New Radio: The Prospects for GaN from Devices to Systems

Organizers: Pere L. Gilabert, Universitat Politècnica de Catalunya; Spyros Pavlidis, North Carolina State University; and Neil Braithwaite, Consultant


5G has reignited a race amongst competing semiconductor technologies for inclusion in next-generation amplifiers, among which gallium nitride (GaN) is a major contender due its high power and temperature handling capabilities. In this workshop, we will address the prospects of GaN for new radio 5G (NR-5G) by tackling the full range of devices to systems opportunities and challenges. This begins with a comparison of the leading GaN MMIC technologies that are distinguished by the substrate of choice, namely GaN-on-Si and GaN-on-SiC. Trade-offs in material and device performance, as well as cost, will be addressed, as well as examples of current and upcoming MMIC designs for the market. Due to the high power of GaN MMIC modules and its relatively young age, reliability and packaging are critical. We will therefore present approaches to satisfy both the RF and thermal performance demands of GaN, alongside examples of hybrid GaN PAs. In addition, some high efficient amplification architectures and their suitability for NR-5G will be discussed. To guarantee the required linearity levels, digital and analog signal processing solutions for linear and nonlinear distortion compensation of ultra-wideband or multi-band transmissions will be presented. Finally, we will address the characterization and compensation of unwanted load modulation effects in future MIMO transceivers between the antenna array and the PAs that drive them.


Industrialized GaN-on-Silicon – Uniquely Sustainable Technology for 5G Applications

Timothy Boles, MACOM Technology Solutions

100nm GaN on Si Technology for 5G application

Charles Edoua, OMMIC

Hybrid Power Amplifier and Packaging Approaches for GaN HEMTs

Spyridon Pavlidis, North Carolina State University

Future challenges on 5G NR GaN PA design

Gayle Collins, Obsidian Microwave

Load and Supply Modulation Techniques for Next-Generation Radio

Taylor W. Barton, University of Colorado Boulder

Linearization techniques applicable to 5G

Neil Braithwaite, Consultant

System-Level Design Considerations for DPD taking into account NR-5G challenges

John Wood, Wolfspeed

Modeling and linearization of MIMO transceivers

Thomas Eriksson, Chalmers University

Date & Time: Sunday, January 20, 2019, 1:30 pm – 5:30 pm

2) RF transceiver imperfections in wideband and millimeter wave systems

Organizers: Tomas Gotthans,  Brno University of Technology and Genevieve Baudoin, Université Paris-Est, ESIEE Paris


One of the key aspects of 5G and beyond systems is the use of modes with bandwidths substantially wider than in the contemporary systems . The requirements on both the linearity and efficiency of the RF transceivers result in need of RF imperfection compensation techniques such as (digital) linearization of power amplifiers. These techniques, including a digital predistortion, are thus facing the problem of the increased channel bandwidth, especially in the millimeter-wave bands. Moreover the presence of other RF imperfections, such as phase noise, DC offset or frequency dependent I/Q mismatch makes the application of the standard digital predistortion more challenging. After the review of RF transceiver imperfections and their influence to single and multicarrier systems, this workshop focus on the techniques for digital predistortion applicable to future wideband communication systems and presents an example experiment in 60 GHz band.


RF Transceiver imperfections: models & influence to multi-carrier and single-carrier signals

Tomas Gotthans and Roman Marsalek, Brno University of Technology

RF imperfections compensation techniques on Millimeter-wave setups

Tomas Gotthans and Roman Marsalek, Brno University of Technology

Subband processing for wideband Digital PreDistorters

Olivier Venard & Genevieve Baudoin, Université Paris-Est, ESIEE Paris, France

Optimization of the output stage of RF Power Amplifiers to keep high efficiency at back-off power under antenna mismatch

Kimon Vivien, Olivier Venard & Genevieve Baudoin, Université Paris-Est, ESIEE Paris, France

Joint DPD and Suppression of PA Load-pulling in Isolator Free MIMO Transceiver

Patrick Roblin & Yunsik Hahn, Ohio State University

Date & Time: Sunday, January 20, 2019, 1:30 pm – 5:30 pm

3) Microwave Power Amplifier Design and High Performance Innovative Passives

Organizers: Howard Hausman, President/CEO, RF Microwave Consulting Services, Adjunct Professor, Hofstra University


Microwave power amplifiers are key parts of many microwave systems. The design of these parts has evolved from designing the individual amplifiers stages to integrating Microwave Monolithic Integrated Circuits (MMIC) as building blocks with known key parameters. This technique cuts the design cycle, lowers the engineering cost and ultimately results in a more consistent and reliable product. This workshop focuses on the theory and technology needed to select, integrate and optimize the design of an SSPA using MMIC modules configured on microstrip transmission lines. Although focusing on power amplifiers, the material presented is applicable to the design of low noise amplifiers, intermediate stage amplifiers and many different types of Integrated Microwave Assemblies (IMA) commonly used in communication systems (satellite and ground based), Electronic Warfare systems, Radars, missile systems, etc.

High performance passive components will be elaborated in detail in the second part of the workshop, underlining their importance in RF front-end modules (FEM) consisting of T/R switches, low-noise-amplifiers and power amplifiers. Passive devices account for more than 60% of the area and cost of modern high performance RFICs. Innovative passive designs and their optimal usage in RF/mm-wave integrated circuits will be presented.


Microwave Power Amplifier Design

Howard Hausman, President/CEO, RF Microwave Consulting Services, Adjunct Professor, Hofstra University

High Performance Innovative Passives

Venkata Narayana Rao Vanukuru, Design Enablement Team, GLOBALFOUNDRIES, Bangalore, India